specifications and information are subject to chang e without notice. triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8902 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 7 june 2012 FH101 high dynamic range fet product features ? 50 ? 4000 mhz ? 18 db gain ? +18 dbm p1db ? +36 dbm oip3 ? low noise figure ? single or dual supply operation ? mttf > 100 years ? lead free/green/rohs-compliant sot-89 package applications ? mobile infrastructure ? catv / dbs ? wlan / ism ? defense / homeland security product description the FH101 is a high dynamic range fet packaged in a low-cost surface-mount package. the combination of low noise figure and high output ip3 at the same bias point makes it ideal for receiver and transmitter applications. the device combines dependable performance with superb quality to maintain mttf values exceeding 100 years at mounting temperatures of +85 c. the FH101 is available in the environmentally friendly lead-free/green/rohs- compliant sot-89 package. the device utilizes a high reliability gaas mesfet technology and is targeted for applications where high linearity is required. it is well suited for various current and next generation wireless technologies such as gprs, gsm, cdma, and w-cdma. in addition, the FH101 will work for other applications within the 50 to 4000 mhz frequency range such as fixed wireless. functional diagram function pin no. gate 1 drain 3 source 2, 4 specifications (1) dc electrical parameter units min typ max saturated drain current, idss (2) ma 100 140 170 transconductance, gm ms 120 pinch-off voltage, vp (3) v -3 -1.5 rf parameter units min typ max operational bandwidth mhz 50 ? 4000 test frequency mhz 800 small-signal gain, gss db 17 18 max stable gain, gmsg db 23 output ip3 (4) dbm +32 +36 p1db dbm +18 minimum noise figure (5) db 0.77 drain bias v +5 gate bias v 0 1. dc and rf parameters are measured under the fol lowing conditions unless otherwise noted: 25 c with vds = 5v, vgs = 0v, in a 50 system. 2. idss is measured with vgs = 0v. 3. pinch-off voltage is measured with ids = 0.6 ma . 4. 3oip measured with two tones at an output power of +5 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. 5. the minimum noise figure has g s = g l = g opt . absolute maximum rating parameter rating storage temperature -55 to +150 c drain to source voltage +7 v gate to source voltage -6 v gate current 4.5 ma rf input power (continuous) 4 db above input p1db thermal resistance, rth 59 c/w junction temperature +160 c operation of this device above any of these paramet ers may cause permanent damage. typical performance (6) parameter units typical frequency mhz 900 1960 2140 s21 db 19 16.5 16.5 s11 db -11 -20 -22 s22 db -10 -9 -9 output p1db dbm +18.8 +18.1 +19.1 output ip3 (4) dbm +36 +36 +36 noise figure db 2.7 3.1 3.0 drain bias 5v @ 140ma gate voltage v 0 6. the device requires appropriate matching to beco me unconditionally stable. parameters reflect performance in an appropriate application circuit. ordering information part no. description FH101-g high dynamic range fet (lead-free/green/rohs-compliant sot-89 package) standard tape / reel size = 1000 pieces on a 7? ree l 1 2 3 4 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice. triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8902 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 7 june 2012 FH101 high dynamic range fet typical device data data is shown at a biasing configuration of v ds = +5 v, i ds = 140 ma, 25 c for the unmatched device in a 50 ohm system) 0 1 2 3 frequency (ghz) gain and max. stable gain 12 14 16 18 20 22 24 s21 and msg (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 6ghz swp min 0.01ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 6ghz swp min 0.01ghz notes: the gain for the unmatched device in 50 ohm system is shown as the trace in blue color. for a tuned c ircuit for a particular frequency, it is expected that actual gain will be higher, as hig h as the maximum stable gain. the maximum stable g ain is shown in the red line. the impedance plots are shown from 10 ? 6000 mhz, with markers placed at 0.5 ? 6.0 ghz in 0.5 ghz incremen ts. output ip3 vs. temperature 25 30 35 40 45 -40 -15 10 35 60 85 temperature ( c) o ip 3 ( d b m ) 5v 100% idss output ip3 vs. output power 25 30 35 40 45 0 2 4 6 8 10 12 output power per tone (dbm) o ip 3 ( d b m ) 5v 100% idss noise figure vs. frequency 0 0.5 1 1.5 2 2.5 0.5 1 1.5 2 frequency (ghz) n o is e f ig u r e (d b ) nf (unmatched device) minimum nf s-parameters (v d = +5 v, i d = 140 ma, v g = 0 v, 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 0.00 -4.08 19.36 176.06 -51.05 87.96 -4.38 -3.34 250 -0.13 -19.64 19.19 164.65 -37.15 78.37 -4.52 -1 1.51 500 -0.34 -39.41 18.85 150.19 -31.34 66.75 -4.77 -2 2.43 750 -0.55 -58.33 18.47 136.21 -28.24 55.74 -5.19 -3 3.05 1000 -0.83 -75.93 17.95 123.24 -26.22 45.25 -5.77 - 43.46 1250 -1.16 -93.29 17.47 110.92 -24.88 35.22 -6.44 - 53.09 1500 -1.50 -110.36 16.82 99.18 -23.95 26.69 -7.14 - 61.08 1750 -1.80 -125.64 16.21 88.19 -23.27 18.17 -7.94 - 69.92 2000 -2.03 -140.92 15.65 77.53 -22.81 9.87 -8.84 -7 8.43 2250 -2.25 -155.64 15.05 67.15 -22.39 2.11 -9.57 -8 6.41 2500 -2.37 -169.80 14.42 57.62 -22.25 -4.68 -10.43 -93.92 2750 -2.55 177.26 13.74 48.11 -22.08 -11.35 -11.43 -101.88 3000 -2.62 165.93 13.18 39.86 -22.01 -17.16 -12.30 -108.95 noise parameters (v d = +5 v, i d = 140 ma, v g = 0 v, 25 c, calibrated to device leads) freq (mhz) nf,min (db) magopt (mag) angopt (deg) rn 700 0.51 0.574 32.8 0.403 800 0.77 0.535 37.4 0.409 900 0.66 0.508 44.1 0.379 1000 0.74 0.488 50.4 0.365 1100 0.85 0.463 56.4 0.357 1200 0.85 0.458 62.0 0.345 1300 0.95 0.446 67.3 0.335 1400 1.07 0.450 73.3 0.323 device s-parameters and noise are available for dow nload from the website at: http://www.wj.com www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice. triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8902 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 7 june 2012 FH101 high dynamic range fet reference design: 35 mhz, 17 db gain frequency mhz 30 35 40 gain db 16.6 16.8 16.8 s11 db -19 -20 -13 s22 db -21 -16 -14 p1db dbm +18 oip3 dbm +34 noise figure db 4.0 3.4 3.2 supply voltage v +5 supply current ma 140 25 30 35 40 45 frequency (mhz) gain / return loss 13 14 15 16 17 18 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=r1 c=68 pf id=c2 c=1000 pf id=c3 c=1000 pf id=c6 c=1000 pf id=l1 l=470 nh id=r6 r=390 ohm id=r7 r=390 ohm id=r8 l=390 nh id=c1 r=3.9 ohm 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 170 mhz, 14 db gain frequency mhz 160 170 180 gain db 14.1 14.2 14.3 s11 db -25 -33 -28 s22 db -21 -23 -26 p1db dbm +18.6 oip3 dbm +36 noise figure db 2.7 2.7 2.7 supply voltage v +5 supply current ma 140 0.12 0.14 0.16 0.18 0.2 0.22 frequency (ghz) gain / return loss (db) 11 12 13 14 15 gain (db) -40 -30 -20 -10 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=r1 c=24 pf id=c2 c=1000 pf id=c3 c=1000 pf id=c6 c=1000 pf id=l1 l=220 nh id=r6 r=240 ohm id=r7 r=240 ohm id=r2 r=4 ohm id=r8 l=82 nh 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. FH101 FH101 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice. triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8902 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 7 june 2012 FH101 high dynamic range fet reference design: 260 mhz, 25 db gain frequency mhz 250 260 270 gain db 25.2 25.1 24.9 s11 db -23 -22 -13 s22 db -12 -14 -17 p1db dbm +19.4 oip3 dbm +34.5 noise figure db 1.8 1.9 2.1 supply voltage v +5 supply current ma 140 0.2 0.22 0.24 0.26 0.28 0.3 frequency (ghz) gain / return loss 21 22 23 24 25 26 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=c2 c=1000 pf c=0.2 pf id=r1 l=120 nh id=l1 l=220 nh r=3.3 ohm id=c3 c=1.8e4 pf id=c1 c=1000 pf id=c6 c=1000 pf id=c5 r=1e4 ohm id=r6 r=2000 ohm id=r7 r=2000 ohm 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 460 mhz, 20 db gain frequency mhz 450 460 470 gain db 19.9 19.9 19.9 s11 db -24 -24 -21 s22 db -16 -15 -15 p1db dbm +18.6 oip3 dbm +36 noise figure db 1.95 2.08 2.17 supply voltage v +5 supply current ma 140 0.34 0.38 0.42 0.46 0.5 0.54 0.58 frequency (ghz) gain / return loss 16 17 18 19 20 21 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=c3 c=1000 pf id=c2 c=1000 pf id=r1 l=36 nh id=l1 l=100 nh id=c5 r=5000 ohm id=c1 c=1000 pf id=r6 r=750 ohm id=r7 r=750 ohm id=c6 c=1000 pf id=r2 l=10 nh 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line has a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. FH101 FH101 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice. triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8902 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 7 june 2012 FH101 high dynamic range fet reference design: 790 mhz, 19 db gain frequency ghz 746 790 835 gain db 19.2 19.4 19.3 s11 db -20 -28 -15 s22 db -22 -23 -22 p1db dbm +19 oip3 dbm +36 noise figure db 2.3 supply voltage v +5 supply current ma 140 0.7 0.75 0.8 0.85 0.9 frequency (ghz) gain / return loss 17 17.5 18 18.5 19 19.5 20 gain (db) -30 -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) id=c4 c=1e4 pf id=c2 c=100 pf id=c1 c=100 pf id=r6 r=560 ohm id=r7 r=560 ohm id=c3 c=100 pf id=c6 c=100 pf id=l1 l=27 nh id=r1 l=8.2 nh id=c5 l=10 nh id=r2 l=2.2 nh 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line ha s a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 790 mhz, 17 db gain frequency ghz 746 790 835 gain db 17.3 17.4 17.4 s11 db -19 -19 -16 s22 db -22 -22 -21 p1db dbm +19 oip3 dbm +36 noise figure db 2.0 2.1 2.2 voltage v +5 current ma 140 0.7 0.75 0.8 0.85 0.9 frequency (ghz) gain / return loss 14 15 16 17 18 19 gain ( db) -25 -20 -15 -10 -5 0 s11, s22 (db ) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) noise figure vs. frequency 0 1 2 3 4 740 760 780 800 820 840 frequency (mhz) n f (d b ) 25 c 50 c 90 c id=c1 c=100 pf id=c2 c=100 pf id=c3 c=100 pf id=c4 c=10000 pf id=c6 c=100 pf id=l1 l=33 nh id=r1 l=12 nh id=c5 r=10000 ohm id=r6 r=360 ohm id=r7 r=360 ohm 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line ha s a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. FH101 FH101 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice. triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8902 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 6 of 7 june 2012 FH101 high dynamic range fet reference design: 880 mhz, 18 db gain frequency ghz 850 875 900 gain db 17.95 17.96 18.00 s11 db -16 -15 -15 s22 db -23 -22 -22 p1db dbm +19 oip3 dbm +36 noise figure db 1.8 1.83 1.85 supply voltage v +5 supply current ma 140 0.7 0.8 0.9 1 frequency (ghz) gain / return loss (db) 14 15 16 17 18 19 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) id=c5 r=1e4 ohm id=c4 c=1e4 pf id=c2 c=100 pf id=c1 c=100 pf id=r6 r=360 ohm id=r7 r=360 ohm id=c3 c=100 pf id=l1 l=33 nh id=c6 c=100 pf id=r1 l=10 nh 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line ha s a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. reference design: 800 - 2200 mhz, 15 db gain frequency ghz 900 1900 2140 gain db 14.9 16.3 16.4 s11 db -22 -10 -18 s22 db -14 -9.7 -9.6 p1db dbm +19.1 +19.4 +19.1 oip3 dbm +35.7 +37.0 +36.0 noise figure db 2.4 2.6 2.8 supply voltage v +5 supply current ma 140 0.75 1 1.25 1.5 1.75 2 2.25 frequency (ghz) gain / return loss 8 10 12 14 16 18 gain (db) -30 -20 -10 0 10 20 return loss (db) db(|s(1,1)|) (r) db(|s(2,1)|) (l) db(|s(2,2)|) (r) c=2 pf id=c3 c=100 pf id=c5 l=6.8 nh id=l1 l=18 nh id=r1 l=2.7 nh id=c1 r=2.2 ohm tlinp id=tl1 z0=50 ohm l=80 mil eeff=3.4 loss=0 f0=0 ghz id=c2 c=100 pf id=c4 c=100 pf id=r6 r=240 ohm id=r7 r=240 ohm id=c6 c=100 pf 1 2 net="fh1" +5v notes: 1. circuit board material: .014? getek ml200dss ( r = 4.2), 1 oz copper. the main microstrip line ha s a line impedance of 50 . 2. components not shown in the schematic are either no t used or loaded with a thru. gain for the circuit can be adjusted slightly with the modification of the feedback resistance. 3. a dc blocking capacitor needs to be placed before c 1 if dc is present at the input of the circuit. FH101 FH101 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice. triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8902 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 7 of 7 june 2012 FH101 high dynamic range fet FH101-g mechanical information this package is lead-free/green/rohs-compliant. the pla ting material on the leads is nipdau. it is compatible wi th both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. outline drawing land pattern product marking the FH101-g will be marked with an ?fh1g? designator. an alphanumeric lot code (?xxxx-x?) is also marked below the part designator on the top surface of the package. a ?1? will be lasermarked in the upper right-hand corner. the obsolete tin-lead package is marked with an ?fh1? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 1 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35mm (#80 / .0135?) dia meter drill and have a final plated thru diameter of .25 mm (.010?) . 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / thermal via reg ion contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. fh1g xxxx-x www.datasheet.net/ datasheet pdf - http://www..co.kr/
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